Semiconductormaterials相关论文
InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor bro
We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications i......
相比于第三代半导体材料碳化硅(SiC)和氮化镓(GaN),氧化镓(Ga2O3)具有禁带宽度更大、击穿电场更强、吸收截止边更短、生长成本更低等优点......
A simple semi-empirical model for radiative and Auger recombination constants is suggested, accounting for hole localiza......
Toward commercial realization of quantum dot based white light-emitting diodes for general illuminat
We demonstrate the first commercial production–ready white light-emitting diodes (LEDs) for the general illumination ma......
纳米半导体硅薄膜是利用等离子体增强化学气相沉积(PECVD)方法制备的,制备可以很好地进行调节控制。纳米硅薄膜由两种组元:纳米尺度晶粒组元......